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PTVA123501EC Thermally-Enhanced High Power RF LDMOS FETs

PTVA123501EC Description

PTVA123501EC PTVA123501FC Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 * 1400 MHz .
The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band.

PTVA123501EC Features

* include high gain and thermally-enhanced package with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTVA123501EC Package H-36248-2 PTVA123501FC Package H-37248-2 Power Sweep, Pulsed RF

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Thermally-Enhanced High Power LDMOS FETs Infineon
Infineon PTVA123501EC-like datasheet