PTVA123501EC
PTVA123501EC is Thermally-Enhanced High Power RF LDMOS FETs manufactured by Infineon.
PTVA123501EC PTVA123501FC
Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200
- 1400 MHz
Description
The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTVA123501EC Package H-36248-2
PTVA123501FC Package H-37248-2
Power Sweep, Pulsed RF IDQ = 150 m A, VDD = 50 V, TCASE = 25°C,
300 µs pulse width, 12% duty cycle
POUT (d Bm) Drain Efficiency (%)
60 80
Output Power
70 60
45 50
30 30
Efficiency
32 34 36
1200 MHz
1300 MHz
1400 MHz
40 a123501ec_g1-1
PIN (d Bm)
Features
- Broadband internal input and output matching
- High gain and efficiency
- Integrated ESD protection
- Human Body Model Class 2 (per...
