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PTVA123501FC - Thermally-Enhanced High Power RF LDMOS FETs

Download the PTVA123501FC datasheet PDF (PTVA123501EC included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for thermally-enhanced high power rf ldmos fets.

Description

The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band.

Features

  • include high gain and thermally-enhanced package with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTVA123501EC Package H-36248-2 PTVA123501FC Package H-37248-2 Power Sweep, Pulsed RF IDQ = 150 mA, VDD = 50 V, TCASE = 25°C, 300 µs pulse width, 12% duty cycle POUT (dBm) Drain Efficiency (%) 60 80 55 Output Power 50 70 60 45 50 40 35 30 30 Efficiency 32 34 36 1200 MHz 40 1.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PTVA123501EC-Infineon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PTVA123501FC
Manufacturer Infineon
File Size 611.19 KB
Description Thermally-Enhanced High Power RF LDMOS FETs
Datasheet download datasheet PTVA123501FC Datasheet

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Full PDF Text Transcription

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PTVA123501EC PTVA123501FC Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
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