MSN0460D Overview
MSN0460D 40V(D-S) N-Channel Enhancement Mode Power MOS FET General.
MSN0460D Key Features
- VDS =40V,ID =60A RDS(ON) <13mΩ @ VGS=10V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
- Load switching
- Hard switched and high frequency circuits
- Uninterruptible power supply