ME2302-G
Description
The ME2302 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package.
Key Features
- RDS(ON)≦85mΩ@VGS=4.5V
- RDS(ON)≦115mΩ@VGS=2.5V
- RDS(ON)≦130mΩ@VGS=1.8V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
