ME4626/ME4626-G
N-Channel 30-V(D-S) MOSFET
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
GENERAL DESCRIPTION
The ME4626 is the N-Channel logic enhancement mode power field
effect transistors are produced using high cell density , DMOS trench
technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching , and low in-line power loss are needed in
a very small outline surface mount package.
PIN CONFIGURATION
(SOP-8)
Top View
FEATURES
● RDS(ON)≦3.5mΩ@VGS=10V
● RDS(ON)≦4.5mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book
● Battery Powered System
● DC/DC Converter
● Load Switch
e Ordering Information: ME4626 (Pb-free)
ME4626-G (Green product-Halogen free)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current( TJ =150℃)*
TA=25℃
TA=70℃
Pulsed Drain Current
Maximum Power Dissipation*
TA=25℃
TA=70℃
Operating Junction Temperature
Thermal Resistance-Junction to Ambient*
Thermal Resistance-Junction to Lead*
Symbol
VDSS
VGSS
ID
IDM
PD
TJ
RθJA
RθJL
* The device mounted on 1in2 FR4 board with 2 oz copper
Aug, 2009-Ver2.0
Limit
30
±20
21
16.9
84
2.5
1.6
-55 to 150
50
24
Unit
V
V
A
A
W
℃
℃/W
01
