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MRF904 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Description

Designed primarily for use IN High Gain, low noise general purpose amplifiers.

Features

  • Silicon NPN, high Frequency, To-72 packaged, Transistor High Power Gain - GU(max)=11 dB (typ) @ f = 450 MHz 7 dB (typ) @ f = 1 GHz Low Noise Figure NF = 1.5 dB (typ) @ f = 450 MHz 2.
  • High FT - 4 GHz (typ) @ IC = 15 mAdc 1 4 3 1. Emitter 2. Base 3. Collector 4. Case TO-72.

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www.DataSheet4U.com 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF904 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, high Frequency, To-72 packaged, Transistor High Power Gain - GU(max)=11 dB (typ) @ f = 450 MHz 7 dB (typ) @ f = 1 GHz Low Noise Figure NF = 1.5 dB (typ) @ f = 450 MHz 2 • High FT - 4 GHz (typ) @ IC = 15 mAdc 1 4 3 1. Emitter 2. Base 3. Collector 4. Case TO-72 DESCRIPTION: Designed primarily for use IN High Gain, low noise general purpose amplifiers. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 25 3.
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