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43.5-46.5 GHz GaAs MMIC Power Amplifier
May 2005 - Rev 10-May-05
P1016 Chip Device Layout
Features
Excellent Driver Stage 14.0 dB Small Signal Gain +24.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010
General Description
Mimix Broadband's three stage 43.5-46.5 GHz GaAs MMIC power amplifier has a small signal gain of 14.0 dB with +24.0 dBm P1dB output compression point. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die www.
XP1016 Datasheet
