XP1011 - GaAs MMIC Power Amplifier

Product Overview

Mimix Broadband

Datasheet Details

Part number	XP1011
Manufacturer	Mimix Broadband
File Size	182.94 KB
Description	GaAs MMIC Power Amplifier
Datasheet	XP1011 Datasheet
Additional preview pages of the XP1011 datasheet.

Product details

Description

Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id1,2,3) Gate Bias Voltage Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +5.5 VDC 155,415,715 mA +0.3 VDC +8 dBm -65 to +165 OC -55 to MTTF TAble3 MTTF Table 3 (3) Channel temperature affects a device's MTTF.It is recommended to keep channel temperature as low as possible for maximum life.Electrical Characteristics (Ambient Temperature T = 25 oC) Parameter Frequency Range (f ) In

Features

Excellent Linear Output Amplifier Stage 21.0 dB Small Signal Gain +36.0 dBm Third Order Intercept (OIP3) +27.0 dBm Output P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Mimix Broadband’s three stage 36.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +36.0 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron b.

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Published: May 25, 2007 |