MGFC4419G chip equivalent, ingaas hemt chip.
(TARGET)
Low noise figure NFmin,=0.5 dB (MAX.) High associated gain Gs=12.0 dB (MIN.) @ f=12GHz
@ f=12GHz
APPLICATION
X to K band amplifiers.
RECOMMENDED BIAS CONDITIO.
The MGFC4419G low-noise HEMT(High electron Mobility Transistor) is designed for use in X to K band amplifiers.
FEATURES (TARGET)
Low noise figure NFmin,=0.5 dB (MAX.) High associated gain Gs=12.0 dB (MIN.) @ f=12GHz
@ f=12GHz
APPLICATION
X to K ba.
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