MGFC44V4450 Datasheet - Mitsubishi

C band internally matched power GaAs FET

* Internally matched to 50(ohm) system

* High output power P1dB=25W (TYP.) @f=4.4

* 5.0GHz

* High power gain GLP=11.0dB (TYP.) @f=4.4

* 5.0GHz

* High power added efficiency P.A.E.=34% (TYP.) @f=4.4

* 5.0GHz

* Low distortion [item -51] IM3=-45dBc (Typ.) @Po=33.5d

MGFC44V4450

Mitsubishi

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C band internally matched power gaas fet.

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