MGFC44V5964 Datasheet - Mitsubishi

C band internally matched power GaAs FET

* Class A operation Internally matched to 50(ohm) system

* High output power P1dB=24W (TYP.) @f=5.9

* 6.4GHz

* High power gain GLP=9.0dB (TYP.) @f=5.9

* 6.4GHz

* High power added efficiency P.A.E.=33% (TYP.) @f=5.9

* 6.4GHz

* Low distortion [item -51] IM3=-42dBc

MGFC44V5964

Mitsubishi

116.99 KB

C band internally matched power gaas fet.

📁 Related Datasheet

MGFC44V3436 C band internally matched power GaAs FET (Mitsubishi)

MGFC44V3642 C band internally matched power GaAs FET (Mitsubishi)

MGFC44V4450 C band internally matched power GaAs FET (Mitsubishi)

MGFC44V6472 C band internally matched power GaAs FET (Mitsubishi)

MGFC4419G InGaAs HEMT Chip (Mitsubishi)

MGFC4419S Low Noise GaAs HEMT (Mitsubishi)

MGFC40V3742 C band internally matched power GaAs FET (Mitsubishi Electric)

MGFC40V3742A 3.7 - 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET (Mitsubishi)

MGFC40V4450 C band internally matched power GaAs FET (Mitsubishi Electric)

MGFC40V4450A 4.4 - 5.0GHz BAND 10W INTERNALLY MATCHED GaAs FET (Mitsubishi)

TAGS

Image Gallery