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MGFC44V3436 - C band internally matched power GaAs FET

Datasheet Summary

Description

The MGFC44V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4

3.6 GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

Features

  • Class A operation Internally matched to 50(ohm) system.
  • High output power P1dB=25W (TYP. ) @f=3.4.
  • 3.6GHz.
  • High power gain GLP=12.0dB (TYP. ) @f=3.4.
  • 3.6GHz.
  • High power added efficiency P. A. E. =36% (TYP. ) @f=3.4.
  • 3.6GHz.
  • Low distortion [item -51] IM3=-45dBc (TYP. ) @Po=33.5dBm S. C. L 2MIN 17.4 +/- 0.2 8.0 +/- 0.2 2MIN.

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Datasheet preview – MGFC44V3436

Datasheet Details

Part number MGFC44V3436
Manufacturer Mitsubishi
File Size 154.30 KB
Description C band internally matched power GaAs FET
Datasheet download datasheet MGFC44V3436 Datasheet
Additional preview pages of the MGFC44V3436 datasheet.

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< C band internally matched power GaAs FET > MGFC44V3436 3.4 – 3.6 GHz BAND / 25W DESCRIPTION The MGFC44V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system  High output power P1dB=25W (TYP.) @f=3.4 – 3.6GHz  High power gain GLP=12.0dB (TYP.) @f=3.4 – 3.6GHz  High power added efficiency P.A.E.=36% (TYP.) @f=3.4 – 3.6GHz  Low distortion [item -51] IM3=-45dBc (TYP.) @Po=33.5dBm S.C.L 2MIN 17.4 +/- 0.2 8.0 +/- 0.2 2MIN OUTLINE R1.2 24 +/- 0.3 unit : mm 0.6 +/- 0.15 (1 ) (2 ) (3 ) APPLICATION  item 01 : 3.4 – 3.6 GHz band power amplifier  item 51 : 3.4 – 3.
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