* E SEATING PLANE F DIM A B C D E F G H K N Q R STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465
* 04 ISSUE D (MRF286) RADIUS U 4 PL 1 RADIUS 4 PL S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030”
MRF286S
Motorola
234.49 KB
The rf sub-micron mosfet line rf power field effect transistors.
www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document from WISD RF Marketing The RF Sub Micron MOSFET Line RF Pow.
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