MRF6V3090NBR1 transistors equivalent, rf power field effect transistors.
* Characterized with Series Equivalent Large--Signal Impedance Parameters
* Internally Input Matched for Ease of Use
* Qualified Up to a Maximum of 50 VDD Ope.
with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast applications.
* Typical DVB--T OFDM .
Image gallery
Download