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NCE2008E Datasheet, NCE Power Semiconductor

NCE2008E Datasheet, NCE Power Semiconductor

NCE2008E

datasheet Download (Size : 319.41KB)

NCE2008E Datasheet

NCE2008E mosfet equivalent, nce n-channel enhancement mode power mosfet.

NCE2008E

datasheet Download (Size : 319.41KB)

NCE2008E Datasheet

Features and benefits


* VDS = 20V,ID =6A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 24mΩ @ VGS=4.5V ESD Rating: 2000V HBM
* High power and current handing capability
* Lead free product i.

Application

.It is ESD protested. General Features
* VDS = 20V,ID =6A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 24mΩ @ VGS=4.5V ESD R.

Description

The NCE2008E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Feature.

Image gallery

NCE2008E Page 1 NCE2008E Page 2 NCE2008E Page 3

TAGS

NCE2008E
NCE
N-Channel
Enhancement
Mode
Power
MOSFET
NCE Power Semiconductor

Manufacturer


NCE Power Semiconductor

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