• Part: NCE2008E
  • Manufacturer: NCE Power Semiconductor
  • Size: 319.41 KB
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NCE2008E Description

The NCE2008E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested.

NCE2008E Key Features

  • VDS = 20V,ID =6A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 24mΩ @ VGS=4.5V ESD Rating: 2000V HBM
  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package
  • PWM application
  • Load switch