NCE2304 - NCE N-Channel Enhancement Mode Power MOSFET

Description

The NCE2304 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications.

Features

VDS = 30V,ID = 3.6A RDS(ON) < 73mΩ @ VGS=4.5V RDS(ON).

NCE Power Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	NCE2304
Manufacturer	NCE Power Semiconductor
File Size	311.96 KB
Description	NCE N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE2304 Datasheet
Additional preview pages of the NCE2304 datasheet.

📁 Similar Datasheet

NCE2302D - N-Channel 20V MOSFET (VBsemi)
NCE2025I - N-Channel MOSFET (VBsemi)
NCE2025S - N-Channel MOSFET (VBsemi)
NCE20H11 - N-Channel 20V MOSFET (VBsemi)
NCE0103 - N-Channel 100V MOSFET (VBsemi)
NCE0157A2 - N-Channel Power MOSFET (VBsemi)
NCE01H16 - N-Channel MOSFET (VBsemi)
NCE02H10T - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
NCE1520 - N-Channel 150-V MOSFET (VBsemi)
NCE1540KA - N-Channel 150V MOSFET (VBsemi)

Other Datasheets by NCE Power Semiconductor

NCE2301 - NCE P-Channel Enhancement Mode Power MOSFET
NCE2301A - P-Channel Enhancement Mode Power MOSFET
NCE2301B - P-Channel Enhancement Mode Power MOSFET
NCE2301C - P-Channel Enhancement Mode Power MOSFET
NCE2301D - P-Channel Enhancement Mode Power MOSFET
NCE2301E - P-Channel Enhancement Mode Power MOSFET
NCE2301F - P-Channel Enhancement Mode Power MOSFET
NCE2302 - N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text

http://www.ncepower.com Pb Free Product NCE2304 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2304 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = 30V,ID = 3.6A RDS(ON) < 73mΩ @ VGS=4.

Published: May 22, 2015 |