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NCE2301A - P-Channel Enhancement Mode Power MOSFET

Product Overview

NCE Power Semiconductor

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NCE2301A P-Channel Enhancement Mode Power MOSFET by NCE Power Semiconductor - Datasheet Preview — Datasheet preview – NCE2301A

Datasheet Details

Part number	NCE2301A
Manufacturer	NCE Power Semiconductor
File Size	260.84 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	NCE2301A Datasheet
Additional preview pages of the NCE2301A datasheet.

Product details

Description

The NCE2301A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

VDS = -15V,ID = -3.0A RDS(ON) < 70mΩ @ VGS=-2.5V RDS(ON) < 80mΩ @ VGS=-4.5V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package Schematic diagram Marking and pin assignment.

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Other Datasheets by NCE Power Semiconductor

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NCE2301B - P-Channel Enhancement Mode Power MOSFET
NCE2301C - P-Channel Enhancement Mode Power MOSFET
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NCE2301E - P-Channel Enhancement Mode Power MOSFET
NCE2301F - P-Channel Enhancement Mode Power MOSFET

Published: Jun 2, 2018 |