NCE2301E Datasheet - NCE Power Semiconductor

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NCE2301E P-Channel Enhancement Mode Power MOSFET

http://www.ncepower.com Pb Free Product NCE2301E NCE P-Channel Enhancement Mode Power MOSFET .
The NCE2301E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

NCE2301E-NCEPowerSemiconductor.pdf

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Datasheet Details

Part number:

NCE2301E

Manufacturer:

NCE Power Semiconductor

File Size:

296.83 KB

Description:

P-Channel Enhancement Mode Power MOSFET

Features

* VDS = -20V,ID =-2.6A RDS(ON) < 150mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V ESD Rating: 2000V HBM
* High power and current handing capability
* Lead free product is acquired

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NCE2301E P-Channel Enhancement Mode Power MOSFET NCE Power Semiconductor

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