NCE2301E Datasheet, Mosfet, NCE Power Semiconductor

NCE2301E Features

• Mosfet
• VDS = -20V,ID =-2.6A RDS(ON) < 150mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V ESD Rating: 2000V HBM
• High power and current handing capability
• Lead free prod

PDF File Details

Part number:

NCE2301E

Manufacturer:

NCE Power Semiconductor

File Size:

296.83kb

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📄 Datasheet

Description:

P-channel enhancement mode power mosfet. The NCE2301E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as

NCE2301E Application

• Applications .It is ESD protested. General Features
• VDS = -20V,ID =-2.6A RDS(ON) < 150mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V ESD Rati

TAGS

NCE2301E

NCE Power Semiconductor

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