NCE30D2519K mosfet equivalent, n & p-channel enhancement mode power mosfet.
N channel
* VDS =30V,ID =25A RDS(ON) <12mΩ @ VGS=10V RDS(ON) <18mΩ @ VGS=4.5V
p channel
* VDS =-30V,ID =-19A RDS(ON) <35mΩ @ VGS=-10V RDS(ON) <65mΩ @ VGS=-4.5V
General Features N channel
* VDS =30V,ID =25A RDS(ON) <12mΩ @ VGS=10V RDS(ON) <18mΩ @ VGS=4.5V
p channel
* VDS.
The NCE30D2519K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features N channel
* VDS =30V,ID =25A RDS(ON) <12mΩ @ VGS=10V RDS(ON) <18mΩ @.
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