NCE30D2519K Description
The NCE30D2519K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
NCE30D2519K Key Features
- VDS =30V,ID =25A RDS(ON) <12mΩ @ VGS=10V RDS(ON) <18mΩ @ VGS=4.5V
- VDS =-30V,ID =-19A RDS(ON) <35mΩ @ VGS=-10V RDS(ON) <65mΩ @ VGS=-4.5V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
- H-bridge
- Inverters
- Tape width