p-channel enhancement mode power mosfet.
* VDS =-60V,ID =-25A RDS(ON) <45mΩ @ VGS=-10V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good st.
General Features
* VDS =-60V,ID =-25A RDS(ON) <45mΩ @ VGS=-10V
* High density cell design for ultra low Rdson .
The NCE60P25 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.
General Features
* VDS =-60V,ID =-25A RDS(ON) <45mΩ @ VGS=-10V
* High d.
Image gallery
TAGS
Download (Size : 321.31KB)