NCEP3065QU mosfet equivalent, n-channel super trench i power mosfet.
* VDS =30V,ID =65A RDS(ON)=1.9mΩ (typical) @ VGS=10V RDS(ON)=3.0mΩ (typical) @ VGS=4.5V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistanc.
that
require extremely high le.
The NCEP3065QU uses Super Trench I technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Q.
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