* Low on-state resistance RDS(on)1 = 33 mΩ MAX. (VGS = −10 V, ID = −3 A) 1.44 RDS(on)2 = 59 mΩ MAX. (VGS = −4.5 V, ID = −3 A) 1.8 MAX. 1 5.37 MAX. 4 6.0 ±0.3 4.4 .

of notebook computers. FEATURES
* Low on-state resistance RDS(on)1 = 33 mΩ MAX. (VGS = −10 V, ID = −3 A) 1.44 RDS(.

The µPA1717 is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers. FEATURES
* Low on-state resistance RDS(on)1 = 33 mΩ MAX. (VGS = −10 V, ID = −3 A) 1.44 RDS(on)2 = 59 mΩ MAX. (VGS = −4.5 V, I.

UPA1715

UPA1716

UPA1700A

UPA1701A

UPA1703

UPA1704

UPA1705

UPA1706

UPA1707

UPA1708

UPA1709

UPA1720

UPA1721