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A5G26H605W19N
Airfast RF Power GaN Transistor
Rev. 1 — 21 December 2023
This 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz.
This part is characterized and performance is guaranteed for applications operating in the 2496 to 2690 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
2600 MHz
• Typical Doherty Single−Carrier W−CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQA = 300 mA, VGSB = – 5.4 Vdc, Pout = 85 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
A5G26H605W19N Datasheet
