A5G26H605W19N - Airfast RF Power GaN Transistor

NXP

Datasheet Details

High terminal impedances for optimal broadband performance.
Advanced high performance in.
package Doherty.
Improved linearized error vector magnitude with next generation signal.
Able to withstand extremely high output VSWR and broadband operating conditions.
Plastic package Product data sheet A5G26H605W19N 2496.
2690 MHz, 85 W Avg. , 48 V.

📁 Related Datasheet

📌 All Tags

NXP A5G26H605W19N-like datasheet

A5G26H605W19N Stock/Price