BF1105WR Datasheet - NXP

N-channel dual-gate MOS-FETs

BF1105WR Features

* Short channel transistor with high forward transfer admittance to input capacitance ratio

* Low noise gain controlled amplifier up to 1 GHz.

* Internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. PINNING PIN 1 2 3 4 DESCRIPTI

BF1105WR General Description

source drain gate 2 gate 1 APPLICATIONS * VHF and UHF applications with 5 V supply voltage, such as television tuners and professional communications equipment. DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gat.

BF1105WR Datasheet (351.50 KB)

BF1105WR Datasheet Preview — Preview of BF1105WR PDF

Datasheet Details

Part number:

BF1105WR

Manufacturer:

NXP ↗

File Size:

351.50 KB

Description:

N-channel dual-gate mos-fets.
DISCRETE SEMICONDUCTORS DATA SHEET BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Dec 01 1997.

📁 Related Datasheet

BF1105 N-channel dual-gate MOS-FETs (NXP)

BF1105R N-channel dual-gate MOS-FETs (NXP)

BF1100 Dual-gate MOS-FETs (NXP)

BF1100R Dual-gate MOS-FETs (NXP)

BF1100WR Dual-gate MOS-FET (NXP)

BF1101 N-channel dual-gate MOS-FETs (NXP)

BF1101R N-channel dual-gate MOS-FETs (NXP)

BF1101WR N-channel dual-gate MOS-FETs (NXP)

BF1102 Dual N-channel dual gate MOS-FET (NXP)

BF1102R Dual N-channel dual gate MOS-FETs (Philips)

TAGS

BF1105WR N-channel dual-gate MOS-FETs NXP

Image Gallery

BF1105WR Features

BF1105WR General Description

Datasheet Details

File Size:

Description:

BF1105WR Distributor