BLC6G20-75 - UHF power LDMOS transistor

NXP

BLC6G20-75 Datasheet Preview — Preview of BLC6G20-75 PDF

Datasheet Details

Part number	BLC6G20-75
Manufacturer	NXP ↗
File Size	77.13 KB
Description	UHF power LDMOS transistor
Datasheet	BLC6G20-75_PhilipsSemiconductors.pdf

BLC6G20-75 Product details

Description

75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. 72 (%) 1.5 38.5 62.5 CAUTION This device is sensitive to ElectroStatic Discharge (ESD).Therefore care should

Features

s Typical GSM EDGE performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 550 mA: x Output power = 29.5 W (AV) x Gain = 19 dB x Efﬁciency = 38.5 % x ACPR400 =.
62.5 dBc x ACPR600 =.
72 dBc x EVMrms = 1.5 % s Easy power control s Integrated ESD protection s Excellent ruggedness s High efﬁciency s Excellent thermal stability s Designed for broadband operation (1800 MHz to 2000 MHz) s Internally matched for ease of use Philips Semiconductors BL.

📁 BLC6G20-75 Similar Datasheet

BLC6G20-140 - UHF power LDMOS transistor (Philips)
BLC6G20LS-140 - UHF power LDMOS transistor (Philips)
BLC-015A - Low Pressure Compact Sensors (All Sensors)
BLC-L01D - Low Pressure Compact Sensors (All Sensors)
BLC-L05D - Low Pressure Compact Sensors (All Sensors)
BLC-L10D - Low Pressure Compact Sensors (All Sensors)
BLC-L20D - Low Pressure Compact Sensors (All Sensors)
BLC-L30D - Low Pressure Compact Sensors (All Sensors)

Other Datasheets by NXP

BLC6G20-110 - UHF power LDMOS transistor
BLC6G20LS-110 - UHF power LDMOS transistor
BLC6G20LS-75 - UHF power LDMOS transistor
BLC6G22-100 - UHF power LDMOS transistor
BLC6G22-130 - UHF power LDMOS transistor
BLC6G22LS-100 - UHF power LDMOS transistor

Published: Jan 19, 2007 |