BLC6G20-75 Datasheet PDF (UHF power LDMOS transistor)

BLC6G20-75 - UHF power LDMOS transistor

Description

75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

Table 1: Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

Features

s Typical GSM EDGE performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 550 mA: x Output power = 29.5 W (AV) x Gain = 19 dB x Efﬁciency = 38.5 % x ACPR400 =.
62.5 dBc x ACPR600 =.
72 dBc x EVMrms = 1.5 % s Easy power control s Integrated ESD protection s Excellent ruggedness s High efﬁciency s Excellent thermal stability s Designed for broadband operation (1800 MHz to 2000 MHz) s Internally matched for ease of use Philips Semiconductors BL.

Datasheet Details

Part number	BLC6G20-75
Manufacturer	NXP
File Size	77.13 KB
Description	UHF power LDMOS transistor
Datasheet	BLC6G20-75 Datasheet
Additional preview pages of the BLC6G20-75 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com BLC6G20-75; BLC6G20LS-75 UHF power LDMOS transistor Rev. 01 — 30 January 2006 Objective data sheet 1. Product proﬁle 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation CW GSM EDGE f (MHz) 1930 to 1990 1930 to 1990 VDS PL(AV) (V) 28 28 (W) 63 29.5 Gp (dB) 19 19 ηD (%) 52 ACPR400 ACPR600 EVMrms (dBc) (dBc) −72 (%) 1.5 38.5 −62.5 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.

Published: Jan 19, 2007 |