BLF861 Datasheet, NXP

* High power gain
* Easy power control
* Excellent ruggedness
* Source on underside eliminates DC isolators, reducing common mode inductance
* Designe.

* Communication transmitter applications in the UHF frequency range. DESCRIPTION Silicon N-channel enhancement mode .

Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in an SOT540A package with ceramic cap. The common source is connected to the mounting flange. 3 Top view 4 MBK777 BLF861 PINNING - SOT540A PIN 1 2 3 4 5 drain 1 drain 2 gate 1 ga.