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BLV861 - UHF linear push-pull power transistor

General Description

NPN silicon planar epitaxial transistor with two sections in push-pull configuration.

The device is encapsulated in a SOT289A 4-lead rectangular flange package, with a ceramic cap.

Key Features

  • Double stage internal input and output matching networks for an optimum wideband capability and high gain.
  • Polysilicon emitter ballasting resistors for an optimum temperature profile.
  • Gold metallization ensures excellent reliability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D099 BLV861 UHF linear push-pull power transistor Product specification Supersedes data of 1998 Jan 14 1998 Jan 16 Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES • Double stage internal input and output matching networks for an optimum wideband capability and high gain • Polysilicon emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. APPLICATIONS • Common emitter class-AB output stages of television transmitter amplifiers (sound and vision) operating in bands 4 and 5 (470 to 860 MHz). DESCRIPTION NPN silicon planar epitaxial transistor with two sections in push-pull configuration.