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NXP Semiconductors Electronic Components Datasheet

BLW83 Datasheet

HF/VHF power transistor

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DISCRETE SEMICONDUCTORS
DATA SHEET
BLW83
HF/VHF power transistor
Product specification
August 1986


NXP Semiconductors Electronic Components Datasheet

BLW83 Datasheet

HF/VHF power transistor

No Preview Available !

Philips Semiconductors
HF/VHF power transistor
Product specification
BLW83
DESCRIPTION
N-P-N silicon planar epitaxial
transistor for use in transmitting
amplifiers operating in the h.f. and
v.h.f. bands, with a nominal supply
voltage of 28 V. The transistor is
specified for s.s.b. applications as
linear amplifier in class-A and AB.
The device is resistance stabilized
and is guaranteed to withstand
severe load mismatch conditions.
Matched hFE groups are available on
request.
It has a 3/8" flange envelope with a
ceramic cap. All leads are isolated
from the flange.
QUICK REFERENCE DATA
R.F. performance
MODE OF OPERATION
s.s.b. (class-A)
s.s.b. (class-AB)
VCE
V
26
28
f
MHz
1,6 28
1,6 28
PL
W
0 10 (P.E.P.)
3 30 (P.E.P.)
Gp
dB
> 20
typ. 21
ηdt IC
%A
1,35
typ. 40 typ. 1,34
d3
dB
< −40
typ. 30
Th
°C
70
25
PIN CONFIGURATION
halfpage
1
4
handbook, halfpage
c
b
PINNING - SOT123
PIN DESCRIPTION
1 collector
2 emitter
3 base
4 emitter
23
MBB012
e
MSB057
Fig.1 Simplified outline and symbol.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
2


Part Number BLW83
Description HF/VHF power transistor
Maker NXP
Total Page 11 Pages
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