LLE16045X transistor equivalent, npn microwave power transistor.
* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
* Interdigitated structure provides high emitter efficien.
Intended for use in common emitter, class AB amplifiers in CW conditions for professional applications between 1.5 GHz a.
NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package, with emitter connected to flange.
2 Top view
handbook, 4 columns
LLE16045X
QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in .
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