LLE18040X transistor equivalent, npn microwave power transistor.
Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
* Interdigitated structure provides high emitter efficiency
between 1.7 GHz and 2 GHz. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap me.
NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package, with emitter connected to flange.
2 Top view
LLE18040X
QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter cla.
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