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PBSS4230PANP - NPN/PNP low VCEsat (BISS) transistor

Description

NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

NPN/NPN complement: PBSS4230PAN.

PNP/PNP complement: PBSS5230PAP.

Features

  • Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High efficiency due to less heat generation AEC-Q101 qualified 3.

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PBSS4230PANP 14 December 2012 30 V, 2 A NPN/PNP low VCEsat (BISS) transistor Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PBSS4230PAN. PNP/PNP complement: PBSS5230PAP. 2. Features and benefits • • • • • • Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High efficiency due to less heat generation AEC-Q101 qualified 3. Applications • • • • • Load switch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 4.
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