N04L163WC1C Datasheet (4Mb Ultra-Low Power Asynchronous CMOS SRAM)

Part: N04L163WC1C
Manufacturer: NanoAmp Solutions
Size: 292.79 KB

N04L163WC1C Key Features

Single Wide Power Supply Range 2.2 to 3.6 Volts
Very low standby current 2.0µA at 3.0V (Typical)
Very low operating current 1.5mA at 3.0V and 1µs (Typical)
Simple memory control Single Chip Enable (CE) Byte control for independent byte operation Output Enable (OE) for memory
Low voltage data retention Vcc = 1.5V
Very fast output enable access time 25ns OE access time
Automatic power down to standby mode
TTL patible three-state output driver
pact space saving BGA package available
Ultra Low Power Sort Available

Related NanoAmp Solutions Datasheets

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N04L163WC1C Description

1982 Zanker Road, San Jose, CA 95112 ph: Information 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 16 bit Overview The N04L163WC1C is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power.

N04L163WC1C Applications

Single Wide Power Supply Range 2.2 to 3.6 Volts