
	ON Semiconductor Electronic Components Datasheet

BUV20 Datasheet

NPN Silicon Power Transistor

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BUV20

SWITCHMODEt Series

NPN Silicon Power

Transistor

SWITCHMODE series NPN silicon power transistors are designed

for high speed, high current, high power applications.

• High DC current gain:

hFE min = 20 at IC = 25 A

= 10 at IC = 50 A

• Low VCE(sat):

VCE(sat) max. = 0.6 V at IC = 25 A

= 0.9 V at IC = 50 A

• Very fast switching times:

TF = 0.25 μs at IC = 50 A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emititer Voltage

Collector−Base Voltage

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter−Base Voltage

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Voltage

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VBE = −1.5 V)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter voltage

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(RBE = 100 Ω)

Collector−Current

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ— Continuous

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ— Peak (PW v 10 ms)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase−Current continuous

Total Power Dissipation

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TC = 25_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎJunction Temperature

Range

Symbol

VCEO(sus)

VCBO

VEBO

VCEX

VCER

ICM

TJ, Tstg

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic

Symbol

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎto Case

θJC

BUV20 BUV60

125

160 260

150 260

250

– 65 to 200

BUV20 BUV60

0.7

Unit

Vdc

Adc

Apk

Adc

Watts

Unit

_C/W

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50 AMPERES

NPN SILICON POWER

METAL TRANSISTOR

125 VOLTS, 250 WATTS

CASE 197A−05

TO−204AE

(TO−3)

August, 2006 − Rev. 11

Publication Order Number:

BUV20/D


	ON Semiconductor Electronic Components Datasheet

BUV20 Datasheet

NPN Silicon Power Transistor

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BUV20

1.0

0.8

0.6

0.4

0.2

0 40

80 120 160 200

TC, TEMPERATURE (°C)

Figure 1. Power Derating

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic

Symbol Min Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS1

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Sustaining Voltage

(IC = 200 mA, IB = 0, L = 25 mH)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current at Reverse Bias

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE =140V,VBE =−1.5V)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 140 V, VBE = − 1.5 V, TC = 125_C)

(VCE = 260 V, VBE = − 1.5 V)

BUV20, BUV60

BUV20

BUV60

VCEO(sus)

ICEX

125

Vdc

mAdc

3.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Cutoff Current

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 100 V)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter−Base Reverse Voltage

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IE = 50 mA)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter−Cutoff Current

(VEB = 5 V)

BUV20

BUV20, BUV60

ICEO

VEBO

IEBO

3.0 mAdc

1.0 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSECOND BREAKDOWN

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSecond Breakdown Collector Current with base forward biased

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 20 V, t = 1 s)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 40 V, t = 1 s)

IS/b

1.5

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS1

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Current Gain

(IC = 25 A, VCE = 2 V)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC=50A,VCE= 4V)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Saturation Voltage

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 25 A, IB = 2.5 A)

(IC = 50 A, IB = 5 A)

BUV20

hFE

20 60

10 −

BUV20

VCE(sat)

Vdc

0.6

1.2

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase−Emitter Saturation Voltage

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 50 A, IB = 5 A)0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Saturation Voltage

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 25 A, IB = 1.25 A)

(IC = 50 A, IB = 5 A)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC=60A,IB= 7.5A)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase−Emitter Saturation Voltage

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 50 A, IB = 5 A)

(IC = 60 A, IB = 7.5 A)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCurrent Gain — Bandwidth Product

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 15 V, IC = 2 A, f = 4 MHz)

BUV20

BUV60

VBE(sat)

VCE(sat)

VBE(sat)

Vdc

2.0

Vdc

0.9

1.2

Vdc

1.6

1.8

fT 8.0

MHz

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BUV20 Datasheet

NPN Silicon Power Transistor

BUV20 Datasheet

NPN Silicon Power Transistor

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