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FDMC3612-L701 - N-Channel MOSFET

Download the FDMC3612-L701 datasheet PDF. This datasheet also covers the FDMC3612 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This N Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on

state resistance and yet maintain superior switching performance.

Key Features

  • Max rDS(on) = 110 mW at VGS = 10 V, ID = 3.3 A.
  • Max rDS(on) = 122 mW at VGS = 6 V, ID = 3.0 A.
  • Low Profile.
  • 1 mm Max in Power 33.
  • 100% UIL Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FDMC3612-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFET – N-Channel, POWERTRENCH) 100 V, 12 A, 110 mW FDMC3612, FDMC3612-L701 General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance. Features • Max rDS(on) = 110 mW at VGS = 10 V, ID = 3.3 A • Max rDS(on) = 122 mW at VGS = 6 V, ID = 3.0 A • Low Profile − 1 mm Max in Power 33 • 100% UIL Tested • These Devices are Pb−Free and are RoHS Compliant Applications • DC − DC Conversion • PSE Switch DATA SHEET www.onsemi.com 8765 SSSG 1234 DDDD Top Bottom WDFN8 3.3x3.3, 0.65P CASE 511DR FDMC3612 SS SG DDDD Top Bottom WDFN8 3.3x3.3, 0.