Datasheet4U Logo Datasheet4U.com

FDMC6696P - P-Channel Power MOSFET

FDMC6696P Description

MOSFET * P-Channel, POWERTRENCH) -20 V, -75 A, 4.9 mW FDMC6696P General .
This P. Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for RDS(on), switching performance and r.

FDMC6696P Features

* Max RDS(on) = 4.9 mW at VGS =
* 4.5 V, ID =
* 18 A
* Max RDS(on) = 16.4 mW at VGS =
* 1.8 V, ID =
* 9 A
* High Performance Trench Technology for Extremely Low RDS(on)
* High Power and Current Handling Capability in a Widely Used Surface M

FDMC6696P Applications

* Load Switch
* Battery Management
* Power Management
* Reverse Polarity Protection MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain to Source Voltage
* 20 V VGS Gate to Source Voltage ±12 V ID Drain Curren

📥 Download Datasheet

Preview of FDMC6696P PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • FDMC6675BZ - N-Channel MOSFET (Fairchild Semiconductor)
  • FDMC6679AZ - P-Channel MOSFET (On Semiconductor)
  • FDMC6686P - MOSFET (Fairchild Semiconductor)
  • FDMC6688P - MOSFET (Fairchild Semiconductor)
  • FDMC610P - MOSFET (Fairchild Semiconductor)
  • FDMC612PZ - MOSFET (Fairchild Semiconductor)
  • FDMC6296 - Single N-Channel Logic-Level Power Trench MOSFET (Fairchild Semiconductor)
  • FDMC6890NZ - Dual N-Channel PowerTrench MOSFET (Fairchild Semiconductor)

📌 All Tags

P-Channel Power MOSFET ON Semiconductor
ON Semiconductor FDMC6696P-like datasheet