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MOSFET – N-Channel, POWERTRENCH)
30 V, 15 A, 7.0 mW
FDS8817NZ, FDS8817NZ-G
General Description This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to minimize the on−state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Features
• Max rDS(on) = 7 mW at VGS = 10 V, ID = 15 A • Max rDS(on) = 10 mW at VGS = 4.5 V, ID = 12.6 A • HBM ESD Protection Level of 3.
FDS8817NZ Datasheet
