FDS8817NZ
FDS8817NZ is N-Channel MOSFET manufactured by onsemi.
Description
This N- Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to minimize the on- state resistance.
This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs.
Features
- Max r DS(on) = 7 m W at VGS = 10 V, ID = 15 A
- Max r DS(on) = 10 m W at VGS = 4.5 V, ID = 12.6 A
- HBM ESD Protection Level of 3.8 k V Typical-
- High Performance Trench Technology for Extremely Low r DS(on)
- High Power and Current Handling Capability
- These Devices are Pb- Free and are Ro HS pliant
Specifications
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Ratings Unit
VDS Drain to Source Voltage
VGS Gate to Source Voltage
±20
Drain Current
Continuous (Note 1a)
Pulsed
EAS Single Pulse Avalanche Energy (Note 2)
Power Dissipation
(Note 1a)
(Note 1b)
181 m J
TJ, TSTG Operating and Storage Junction Temperature Range
- 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
- The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
DATA SHEET...
