FDS8817NZ Description
This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance. This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs.
FDS8817NZ Key Features
- Max rDS(on) = 7 mW at VGS = 10 V, ID = 15 A
- Max rDS(on) = 10 mW at VGS = 4.5 V, ID = 12.6 A
- HBM ESD Protection Level of 3.8 kV Typical
- High Performance Trench Technology for Extremely Low rDS(on)
- High Power and Current Handling Capability
- These Devices are Pb-Free and are RoHS pliant
- 55 to +150 °C
- The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is imp
- Rev. 4