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FDS8817NZ Datasheet N-Channel MOSFET

Manufacturer: onsemi

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General Description

This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance.

This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Overview

MOSFET – N-Channel, POWERTRENCH) 30 V, 15 A, 7.0 mW FDS8817NZ, FDS8817NZ-G.

Key Features

  • Max rDS(on) = 7 mW at VGS = 10 V, ID = 15 A.
  • Max rDS(on) = 10 mW at VGS = 4.5 V, ID = 12.6 A.
  • HBM ESD Protection Level of 3.8 kV Typical.
  • High Performance Trench Technology for Extremely Low rDS(on).
  • High Power and Current Handling Capability.
  • These Devices are Pb.
  • Free and are RoHS Compliant Specifications MOSFET.

📁 Similar Datasheet

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