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FDV303N - N-Channel Digital FET

Description

These N

produced using ON Semiconductor’s proprietary, high cell density, DMOS technology.

state resistance at low gate drive conditions.

Features

  • 25 V, 0.68 A Continuous, 2 A Peak.
  • RDS(ON) = 0.45 Ω @ VGS = 4.5 V.
  • RDS(ON) = 0.6 Ω @ VGS= 2.7 V.
  • Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits, VGS(th) < 1 V.
  • Gate.
  • Source Zener for ESD Ruggedness, > 6 kV Human Body Model.
  • Compact Industry Standard SOT.
  • 23 Surface Mount Package.
  • This Device is Pb.
  • Free, Halogen Free/BFR Free and is RoHS Compliant www. onsemi. com SOT.
  • 23.

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Datasheet Details

Part number FDV303N
Manufacturer onsemi
File Size 261.90 KB
Description N-Channel Digital FET
Datasheet download datasheet FDV303N Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Digital FET, N-Channel FDV303N General Description These N−Channel enhancement mode field effect transistors are produced using ON Semiconductor’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on−state resistance at low gate drive conditions. This device is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells. It can be used as an inverter or for high−efficiency miniature discrete DC/DC conversion in compact portable electronic devices like cellular phones and pagers. This device has excellent on−state resistance even at gate drive voltages as low as 2.5 V. Features • 25 V, 0.68 A Continuous, 2 A Peak ♦ RDS(ON) = 0.45 Ω @ VGS = 4.5 V ♦ RDS(ON) = 0.6 Ω @ VGS= 2.
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