NDT2955 transistor equivalent, p-channel enhancement mode field effect transistor.
* −2.5 A, −60 V
* RDS(ON) = 300 mW @ VGS = −10 V
* RDS(ON) = 500 mW @ VGS = −4.5 V
* High Density Cell Design for Extremely Low RDS(ON).
* High Power .
* DC/DC Converter
* Power Management
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise noted)
Symbol
Para.
This 60 V P−Channel MOSFET is produced using onsemi’s high
voltage Trench process. It has been optimized for power management plications.
Features
* −2.5 A, −60 V
* RDS(ON) = 300 mW @ VGS = −10 V
* RDS(ON) = 500 mW @ VGS = −4.5 V
* Hi.
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