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NTGD3133P - Power MOSFET

Features

  • Reduced Gate Charge for Fast Switching.
  • 2.5 V Gate Rating Leading Edge Trench Technology for Low On Resistance Independent Devices to Provide Design Flexibility This is a Pb.
  • Free Device http://onsemi. com V(BR)DSS.
  • 20 V RDS(on) MAX 145 mW @.
  • 4.5 V 200 mW @.
  • 2.5 V ID MAX.
  • 2.5 A.

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Full PDF Text Transcription

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www.DataSheet4U.com NTGD3133P Power MOSFET −20 V, −2.5 A, P−Channel, TSOP−6 Dual Features • • • • • • • • • Reduced Gate Charge for Fast Switching −2.5 V Gate Rating Leading Edge Trench Technology for Low On Resistance Independent Devices to Provide Design Flexibility This is a Pb−Free Device http://onsemi.com V(BR)DSS −20 V RDS(on) MAX 145 mW @ −4.5 V 200 mW @ −2.5 V ID MAX −2.
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