Key Features
- RDS(ON), VGS@10V,IDS@500mA=3Ω
- RDS(ON), VGS@4.5V,IDS@200mA=4Ω
- Advanced Trench Process Technology
- High Density Cell Design For Ultra Low On-Resistance
- Very Low Leakage Current In Off Condition
- Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
- ESD Protected 2KV HBM
- Acqire quality system certificate : TS16949
- AEC-Q101 qualified
- Lead free in compliance with EU RoHS 2011/65/EU directive
Datasheets by Manufacturer
- 2N7002KDW — JCET — N-channel MOSFET
- 2N7002KDW — Yangjie Electronic — N-Channel Enhancement Mode Field Effect Transistor
- 2N7002KDW — SeCoS Halbleitertechnologie GmbH — Dual N-Channel MOSFET
- 2N7002KDW — Micro Commercial Components — Dual N-Channel MOSFET
- 2N7002KDWS — Taitron Components — Double N-Channel MOSFET
- 2N7002K — Fairchild Semiconductor — N-channel MOSFET
- 2N7002K — Yangjie Electronic — N-channel MOSFET
- 2N7002KW — Fairchild Semiconductor — N-channel MOSFET
- 2N7002KB — Silikron Semiconductor — MOSFET
- 2N7002K — onsemi — Small-Signal MOSFET
