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Pan Jit International

2N7002KW Datasheet Preview

2N7002KW Datasheet

N-channel MOSFET

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2N7002KW
60V N-Channel Enhancement Mode MOSFET - ESD Protected
FEATURES
• RDS(ON), VGS@10V,IDS@500mA=3
• RDS(ON), VGS@4.5V,IDS@200mA=4
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected 2KV HBM
• Component are in compliance with EU RoHS 2002/95/EC directives
MECHANICALDATA
• Case: SOT-323 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Marking : K72
D
3
12
GS
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
Drain-Source Voltage
PARAMETER
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current 1)
Maximum Power Dissipation
Op e ra ti ng J unc ti o n a nd S to ra g e Te m p e ra ture Ra ng e
TA =25OC
TA =75OC
Junction-to Ambient Thermal Resistance(PCB mounted)2
S ym b o l
VDS
VGS
ID
ID M
PD
TJ,TS TG
RθJ A
Limit
60
+20
115
800
200
120
-55 to + 150
625
Uni ts
V
V
mA
mA
mW
OC
O C /W
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 5 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-JAN.11.2007
PAGE . 1




Pan Jit International

2N7002KW Datasheet Preview

2N7002KW Datasheet

N-channel MOSFET

No Preview Available !

2N7002KW
ELECTRICALCHARACTERISTICS
Static
Parameter
S ym b o l
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
Diode Forward Voltage
Dynamic
BVDSS
VGS (th)
RD S (o n)
RD S (o n)
I
DSS
IG S S
gfS
VSD
To ta l Ga te C ha rg e
Turn-On D e la y Ti me
Turn-Off D e la y Ti me
Input C apaci tance
Output Capacitance
Re ve rs e Tra ns fe r C a p a c i ta nc e
Qg
to n
to ff
Ciss
Coss
Crss
Te s t C o nd i ti o n
V G S =0 V, ID =1 0 uA
V D S =V G S , ID =2 5 0 uA
VGS=4.5V, I D =200mA
VGS=10V, I D =500mA
V =60V, V =0V
DS GS
VGS =+20V, VD S =0V
V D S =15V, ID =250mA
IS =2 0 0 mA , V G S =0 V
V D S =15V, ID =200mA
VGS=4.5V
VD D =30V , RL=150
ID =200mA , VGEN=10V
RG =10
VD S =25V, VGS =0V
f=1.0MHZ
Mi n.
Typ .
Max.
Uni ts
60 - - V
1 - 2.5 V
- - 4.0
- - 3.0
- - 1 uA
- - +10 uA
100 -
- mS
-
0.82
1.3
V
- - 0.8 nC
- - 20
ns
- - 40
- - 35
- - 10 p F
- -5
Switching
Test Circuit
VIN
RG
VDD
RL
VOUT
Gate Charge
Test Circuit
VGS
1mA
RG
VDD
RL
STAD-JAN.11.2007
PAGE . 2


Part Number 2N7002KW
Description N-channel MOSFET
Maker Pan Jit International
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2N7002KW Datasheet PDF






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