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Power Transistors
2SC5127, 2SC5127A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2
s Features
q q q q
4.1±0.2 8.0±0.2 Solder Dip
High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 800 900 800 900 500 8 3.0 1.5 0.5 25 2 150 –55 to +150 Unit V
15.0±0.3
3.0±0.2
Parameter Collector to base voltage Collector to 2SC5127 2SC5127A 2SC5127
Symbol VCBO VCES VCEO VEBO ICP IC IB
13.7–0.2
+0.5
s Absolute Maximum Ratings
1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4
2.6±0.1 0.7±0.
2SC5127A Datasheet
