* 0.45
* 0.1 1.27 +0.2 s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C
2SD966
Panasonic Semiconductor
36.03 KB
Silicon npn epitaxial planer type transistor.
Transistor 2SD966 Silicon NPN epitaxial planer type For low-frequency power amplification For stroboscope 5.9± 0.2 Unit: mm 4.9± 0.2 q q 2.54± 0.1.
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