RJP63F3A
Key Features
- Trench gate and thin wafer technology (G6H series)
- Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ
- High speed switching tf = 100 ns typ
- Low leak current ICES = 1 μA max
- Isolated package TO-220FL
- Part: RJP63F3A
- Description: N-Channel IGBT
- Manufacturer: Renesas
- Size: 240.41 KB