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RJP63F3A - N-Channel IGBT

Download the RJP63F3A datasheet PDF. This datasheet also covers the RJP63F3DPP-M0 variant, as both devices belong to the same n-channel igbt family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Trench gate and thin wafer technology (G6H series).
  • Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ.
  • High speed switching tf = 100 ns typ.
  • Low leak current ICES = 1 μA max.
  • Isolated package TO-220FL Outline.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (RJP63F3DPP-M0_Renesas.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Renesas

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
RJP63F3DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features • Trench gate and thin wafer technology (G6H series) • Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ • High speed switching tf = 100 ns typ • Low leak current ICES = 1 μA max • Isolated package TO-220FL Outline RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL) Preliminary Datasheet R07DS0321EJ0200 Rev.2.00 May 26, 2011 C 1 23 Absolute Maximum Ratings Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Tc = 25°C 1. Gate 2. Collector G 3. Emitter www.DataSheet.co.