TP65H070G4LSGB Overview
The TP65H070G4LSGB 650V, 72mΩ Gallium Nitride (GaN) FET is a normally-off device. It bines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies offering superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance,...
TP65H070G4LSGB Key Features
- Gen IV technology
- JEDEC-qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
- Wide gate safety margin
- Transient over-voltage capability
- Very low QRR
- Reduced crossover loss
- RoHS pliant and Halogen-free packaging
- Achieves increased efficiency in both hard- and soft-switched circuits