Datasheet4U Logo Datasheet4U.com

TP65H070G4LSGB - 650V SuperGaN GaN FET

General Description

The TP65H070G4LSGB 650V, 72mΩ Gallium Nitride (GaN) FET is a normally-off device.

offering superior reliability and performance.

Key Features

  • Gen IV technology.
  • JEDEC-qualified GaN technology.
  • Dynamic RDS(on)eff production tested.
  • Robust design, defined by.
  • Wide gate safety margin.
  • Transient over-voltage capability.
  • Very low QRR.
  • Reduced crossover loss.
  • RoHS compliant and Halogen-free packaging Benefits.
  • Achieves increased efficiency in both hard- and soft-switched circuits.
  • Increased power density.
  • Reduced system size and weight.
  • Overall lower syste.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TP65H070L 650V GaN FET Transphorm
TP65H070LDG 650V GaN FET Transphorm
TP65H070LSG 650V GaN FET Transphorm
TP65H035G4QS 650V FET Transphorm
TP65H035G4WS SuperGaN FET Transphorm

Other Datasheets by Renesas

Part Number Description
TP65H070G4LSG 650V GaN FET
TP65H070G4RS 650V SuperGaN GaN FET
TP65H030G4PQS 650V GaN FET
TP65H030G4PRS 650V GaN FET
TP65H030G4PWS 650V GaN FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Specifications in this document are tentative and subject to change Datasheet TP65H070G4LSGB 650V SuperGaN® GaN FET in PQFN (source tab) Description The TP65H070G4LSGB 650V, 72mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.