TP65H070G4LSGB Datasheet, FET, Renesas

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TP65H070G4LSGB Features and benefits

* Gen IV technology
* JEDEC-qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by — Wide gate safety margin — Transi.

TP65H070G4LSGB Application

* Datacom
* Broad industrial
* PV inverter
* Servo motor
* Consumer
* Computing Key Specificati.

TP65H070G4LSGB Description

The TP65H070G4LSGB 650V, 72mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. The Gen IV SuperGaN® platf.

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