TP65H070G4RS Datasheet, FET, Renesas

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TP65H070G4RS Features and benefits

* Gen IV technology
* JEDEC-qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by — Wide gate safety margin — Transi.

TP65H070G4RS Application

▪ Datacom ▪ Broad industrial ▪ PV inverter ▪ Servo motor ▪ Computing D G KS S Cascode Schematic Symbol Cascode Device.

TP65H070G4RS Description

The TP65H070G4RS 650V, 72mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-ofthe-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. The Gen IV SuperGaN® platform.

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