n-channel enhancement mode power mos transistor.
It is
Palso intended for any applications with low gate drive terequirements. leAPPLICATIONS os HIGH CURRENT, HIGH SWIT.
This MOSFET series realized with STMicroelectronics
cunique STripFET™ process has specifically been udesigned to minimize input capacitance and gate charge. dIt is therefore suitable as primary switch in advanced rohigh-efficiency, high-frequency iso.
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