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IRF530 Datasheet - ON Semiconductor

IRF530 Power Field Effect Transistor

IRF530 Product Preview TMOS E FET.™ Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain to source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters, and PWM motor controls. These devices are particularly well s.

IRF530 Features

* 25°C 1600 1400 1200 Crss 1000 800 Ciss 600 400 200 0 10 Crss 50 5 VGS VDS Coss 10 15 20 25 GATE

* TO

* SOURCE OR DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation http://onsemi.com 4 VGS, GATE

* TO

* SOURCE VOLTAGE (VOLTS) t, TIME (ns

IRF530-ONSemiconductor.pdf

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Datasheet Details

Part number:

IRF530

Manufacturer:

ON Semiconductor ↗

File Size:

183.34 KB

Description:

Power field effect transistor.

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TAGS

IRF530 IRF530 Power Field Effect Transistor ON Semiconductor

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