IRF530 Power Field Effect Transistor

ON Semiconductor

Description

IRF530 Product Preview TMOS E *FET.™ Power Field Effect Transistor N *Channel Enhancement *Mode Silicon Gate This advanced TMOS p.

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IRF530 Datasheet Preview — Preview of IRF530 PDF

Datasheet Specifications

Part number: IRF530
Manufacturer: ON Semiconductor ↗
File Size: 183.34 KB
Datasheet: IRF530-ONSemiconductor.pdf
Description: Power Field Effect Transistor

Features

* 25°C 1600 1400 1200 Crss 1000 800 Ciss 600 400 200 0 10 Crss 50 5 VGS VDS Coss 10 15 20 25 GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation http://onsemi. com 4 VGS, GATE
* TO
* SOURCE VOLTAGE (VOLTS) t, TIME (ns

Applications

* in power supplies, converters, and PWM motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Specified

IRF530 Distributors

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IRF530 Power Field Effect Transistor ON Semiconductor

ON Semiconductor IRF530-like datasheet