IRF530 Datasheet (ON Semiconductor) - Power Field Effect Transistor

IRF530, Power Field Effect Transistor

IRF530 Product Preview TMOS E FET.™ Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes.

This new energy efficient design also offers a drain to source diode with a fast recovery time.

Designed for low voltage, high speed switching applications in power supplies, converters, and PWM motor controls.

These devices are particularly well s

IRF530 Features

* 25°C 1600 1400 1200 Crss 1000 800 Ciss 600 400 200 0 10 Crss 50 5 VGS VDS Coss 10 15 20 25 GATE

* TO

* SOURCE OR DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation http://onsemi.com 4 VGS, GATE

* TO

* SOURCE VOLTAGE (VOLTS) t, TIME (ns