Part number:
IRF530
Manufacturer:
File Size:
183.34 KB
Description:
Power field effect transistor.
Datasheet Details
Part number:
IRF530
Manufacturer:
File Size:
183.34 KB
Description:
Power field effect transistor.
IRF530, Power Field Effect Transistor
IRF530 Product Preview TMOS E FET.™ Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes.
This new energy efficient design also offers a drain to source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power supplies, converters, and PWM motor controls.
These devices are particularly well s
IRF530 Features
* 25°C 1600 1400 1200 Crss 1000 800 Ciss 600 400 200 0 10 Crss 50 5 VGS VDS Coss 10 15 20 25 GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation http://onsemi.com 4 VGS, GATE
* TO
* SOURCE VOLTAGE (VOLTS) t, TIME (ns
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