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IRF644B - N-Channel BFET MOSFET

IRF644B Description

IRF644B * N-Channel BFET MOSFET IRF644B N-Channel BFET MOSFET 250 V, 14 A, 280 mΩ .
These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar, DMOS technology.

IRF644B Features

* 14 A, 250 V, RDS(on) = 280 mΩ @ VGS = 10 V
* Low gate charge (Typ. 47 nC)
* Low Crss (Typ. 30 pF)
* Fast Switching
* 100% Avalanche Tested
* Improved dv/dt Capability D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Sym

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N-Channel BFET MOSFET ON Semiconductor
ON Semiconductor IRF644B-like datasheet

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