IRF644B Datasheet - ON Semiconductor

N-Channel BFET MOSFET

IRF644B Features

* 14 A, 250 V, RDS(on) = 280 mΩ @ VGS = 10 V

* Low gate charge (Typ. 47 nC)

* Low Crss (Typ. 30 pF)

* Fast Switching

* 100% Avalanche Tested

* Improved dv/dt Capability D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Sym

IRF644B General Description

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in.

IRF644B Datasheet (1.11 MB)