IRF830 Power Field Effect Transistor

ON Semiconductor

Description

IRF830 Power Field Effect Transistor N *Channel Enhancement Mode Silicon Gate TMOS This TMOS Power FET is designed for high voltage, high spee.

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Datasheet Specifications

Part number: IRF830
Manufacturer: ON Semiconductor ↗
File Size: 109.97 KB
Datasheet: IRF830-ONSemiconductor.pdf
Description: Power Field Effect Transistor

Applications

* such as switching regulators, converters, solenoid and relay drivers.
* Silicon Gate for Fast Switching Speeds
* Low RDS(on) to Minimize On
* Losses, Specified at Elevated Temperature
* Rugged
* SOA is Power Dissipation Limited
* Source
* to

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IRF830 Power Field Effect Transistor ON Semiconductor

ON Semiconductor IRF830-like datasheet