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IRF830 Datasheet - ON Semiconductor

IRF830 Power Field Effect Transistor

IRF830 Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS This TMOS Power FET is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. Silicon Gate for Fast Switching Speeds Low RDS(on) to Minimize On Losses, Specified at Elevated Temperature Rugged SOA is Power Dissipation Limited Source to Drain Diode Chara.

IRF830-ONSemiconductor.pdf

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Datasheet Details

Part number:

IRF830

Manufacturer:

ON Semiconductor ↗

File Size:

109.97 KB

Description:

Power field effect transistor.

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IRF830 IRF830 Power Field Effect Transistor ON Semiconductor

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